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-ray irradiationOshima, Takeshi; Ito, Hisayoshi
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.191 - 194, 2004/10
no abstracts in English
Lee, K. K.; Oshima, Takeshi; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1097 - 1100, 2002/05
The effect of gamma-ray irradiation on electrical characteristics of n-channel and p-chanel enhancement type 6H-SiC MOSFET was studied. The gate oxide of the MOSFETs were formed using pyrogenic condition. Gamma-ray irradiation was carried out at room temperature at 8.8 kGy(SiO
)/hour. The channel mobility and thrshold voltage for the MOSFETs were estimated from I
-V and I-V curves, respectively. The channel mobility for n-channel one does not change up to 1MGy. The channel mobility for p-channel one increases around 40 kGy and decreases above 40 kGy. This behavior is interpreted in terms of the compensation of intrinsic interface traps by the interface traps generated by irradiation. The fluctuation of thershold voltage for n-channel one by irradiation is less than 0.5V. For p-channel one, the threshold voltage decreases with increasing irradiation dose.
Oshima, Takeshi; Lee, K. K.; Oi, Akihiko; Yoshikawa, Masahito; Ito, Hisayoshi
Materials Science Forum, 389-393, p.1093 - 1096, 2002/05
Gamma-ray irradiation effects on the electrical characteristics such as threshold voltage (V
) and channel mobility (
) for 6H-SiC MOSFETs were studied.The gate oxide of the MOSFETs were annealed in hydrogen at 700 
or steam at 800 in fabrication process to improve the initial electrical characteristics of the MOSFETs.As for the hydrogen-annealed MOSFETs,V was changed from 0.9V to 3.1 V by irradiation at 530kGy. decreased after irradiation above 60 kGy. As for the steam-annealed MOSFETs,V was changed from 2.7 to 3.3 V by irradiation at 530kGy. decreased above 180 kGy. This indicates that radiation resistance for the steam-annealed MOSFETs is higher than that for the hydrogen-annealed MOSFETs.
Kusagaya, Kazuyuki*; Nakamura, Takehiko; Yoshinaga, Makio; Okonogi, Kazunari*; Uetsuka, Hiroshi
JAERI-Research 2001-010, 44 Pages, 2001/03
JAERI-Research-2001-010.pdf:9.91MB
no abstracts in English
Akie, Hiroshi; Nakamura, Takehiko
Progress in Nuclear Energy, 38(3-4), p.363 - 370, 2001/02
Times Cited Count：6 Percentile：44.06(Nuclear Science & Technology)no abstracts in English
Yamashita, Toshiyuki
Nihon Genshiryoku Gakkai "Kodo Nenryo Gijutsu" Kenkyu Senmon Iinkai Hokokusho, p.467 - 474, 2001/00
no abstracts in English
Yamashita, Toshiyuki; Kuramoto, Kenichi; Akie, Hiroshi; Nakano, Yoshihiro; Nitani, Noriko; Nakamura, Takehiko; Kusagaya, Kazuyuki*; Omichi, Toshihiko*
Proceedings of Workshop on Advanced Reactors with Innovative Fuels (ARWIF 2001) (CD-ROM), 10 Pages, 2001/00
no abstracts in English
Nagame, Yuichiro; Zhao, Y. L.*; Otsuki, Tsutomu*; Nishinaka, Ichiro; Tsukada, Kazuaki; Ichikawa, Shinichi; Nakahara, Hiromichi*
Proceedings of 2nd International Conference on Fission and Neutron-rich Nuclei, p.183 - 185, 2000/03
no abstracts in English
Ishii, Yasuyuki; Tajima, Satoshi; Takada, Isao; Mizuhashi, Kiyoshi; Saito, Yuichi; Uno, Sadanori; Okoshi, Kiyonori; Nakajima, Yoshinori; Kamiya, Tomihiro; Sakai, Takuro
Dai-11-Kai Tandemu Kasokuki Oyobi Sono Shuhen Gijutsu No Kenkyukai Hokokushu, p.72 - 74, 1999/01
no abstracts in English
Nomura, Yasushi
Proceedings of 6th International Conference on Nuclear Criticality Safety (ICNC '99), 3, p.1269 - 1275, 1999/00
no abstracts in English
Nemoto, N.*; Shindo, Hiroyuki*; *; Kuboyama, Satoshi*; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Matsuda, Sumio*
Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.154 - 159, 1998/00
no abstracts in English
Nagame, Yuichiro; Nishinaka, Ichiro; Tsukada, Kazuaki; ; Ikezoe, Hiroshi; Y.L.Zhao*; Oura, Yasutsugu*; Sueki, Keisuke*; Nakahara, Hiromichi*; *; et al.
Radiochimica Acta, 78, p.3 - 10, 1997/00
no abstracts in English
Yanagisawa, Kazuaki
Nucl. Eng. Des., 143, p.285 - 294, 1993/00
Times Cited Count：1 Percentile：18.76(Nuclear Science & Technology)no abstracts in English
reactions at low temperatures; Effect of rotational energy of reagent H moleculeTakayanagi, Toshiyuki;
Journal of Chemical Physics, 95(6), p.4154 - 4159, 1991/09
Times Cited Count：13 Percentile：48.18(Chemistry, Physical)no abstracts in English
Hirao, Toshio; Yoshikawa, Masahito; Morita, Yosuke; *; *
JAERI-M 89-207, 128 Pages, 1989/12
no abstracts in English
Sasajima, Hideo
JAERI-M 89-078, 36 Pages, 1989/06
no abstracts in English
-raysYokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Oshima, Takeshi; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*
no journal, ,
no abstracts in English
Sato, Kuri
no journal, ,
no abstracts in English
